IXTH36P15P

Specifications

Parça Durumu

Active

Maximum Idss Ua

10

Maximum Drain Source Resistance Mohm

110@10V

Svhc

Yes

Vds Drainsource Breakdown Voltage

150 V

Typical Gate Charge10v Nc

55

Mounting

Through Hole

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

110 mOhms

Maximum Operating Temperature C

150

Category

Power MOSFET

Channel Type

P

Pin Sayısı

3

Ppap

No

Technology

Si

Typical Input Capacitance Vds Pf

3100@25V

Package Length

16.26(Max)

Channel Mode

Enhancement

Maximum Power Dissipation Mw

300000

Maximum Gate Source Voltage V

±20

Tab

Tab

Supplier Package

TO-247AD

Typical Turnon Delay Time Ns

21

Maximum Continuous Drain Current A

36

Package Width

5.3(Max)

Maximum Gate Threshold Voltage V

4.5

Automotive

No

Typical Turnoff Delay Time Ns

36

Montaj Stili

Through Hole

Qg Gate Charge

55 nC

Maximum Drain Source Voltage V

150

Maximum Gate Source Leakage Current Na

100

Seri

IXTH36P15

Typical Fall Time Ns

15

Package Height

21.46(Max)

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

31

Pcb Changed

3

Minimum Operating Temperature C

-55