Volume pricing
- 1+ pcs$6.99
- 10+ pcs$6.59
- 100+ pcs$6.22
- 500+ pcs$5.87
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Typical Gate Charge Vgs Nc
- 330@10V
- Minimum Operating Temperature
- - 55 C
- Pd Power Dissipation
- 935 W
- Automotive
- No
- Typical Turnon Delay Time Ns
- 30
- Supplier Package
- TO-247
- Maximum Continuous Drain Current A
- 360
- Package Width
- 5.3(Max)
- Maximum Power Dissipation Mw
- 935000
- Number Of Channels
- 1 Channel
- Channel Mode
- Enhancement
- Tab
- Tab
- Maximum Gate Source Voltage V
- ±20
- Package Length
- 16.26(Max)
- Transistor Polarity
- N-Channel
- Vgs Th Gatesource Threshold Voltage
- 2 V
- Id Continuous Drain Current
- 360 A
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Configuration
- Single
- Technology
- Si
- Typical Rise Time Ns
- 23
- Ppap
- No
- Kılıf / Paket
- TO-247-3
- Maks. Çalışma Sıcaklığı
- + 175 C
- Minimum Operating Temperature C
- -55
- Pcb Changed
- 3
- Typical Input Capacitance Vds Pf
- 20000@25V
- Typical Fall Time Ns
- 56
- Maximum Operating Temperature C
- 175
- Category
- Power MOSFET
- Eu Rohs
- Compliant with Exemption
- Channel Type
- N
- Pin Sayısı
- 3
- Svhc Exceeds Threshold
- Yes
- Package Height
- 21.46(Max)
- Typical Gate Charge10v Nc
- 330
- Vds Drainsource Breakdown Voltage
- 55 V
- Svhc
- Yes
- Rds On Drainsource Resistance
- 2.4 mOhms
- Mounting
- Through Hole
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