IXTH2N170D2

Specifications

Tab

Tab

Maximum Gate Source Voltage V

±20

Channel Mode

Depletion

Maximum Power Dissipation Mw

568000

Configuration

Single

Package Length

16.26(Max)

Automotive

No

Typical Gate Charge Vgs Nc

110@5V

Hts

8541.29.00.95

Package Width

5.3(Max)

Maximum Continuous Drain Current A

2

Maximum Gate Threshold Voltage V

4

Supplier Package

TO-247AD

Typical Turnon Delay Time Ns

28

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

1700

Mounting

Through Hole

Number Of Elements Per Chip

1

Svhc

Yes

Eccn Us

EAR99

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

6500@0V

Maximum Idss Ua

25

Typical Turnoff Delay Time Ns

33

Minimum Operating Temperature C

-55

Pcb Changed

3

Typical Input Capacitance Vds Pf

3650@25V

Ppap

No

Typical Rise Time Ns

58

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

106