IXTH24P20

Specifications

Technology

Si

Ppap

No

Typical Input Capacitance Vds Pf

4200@25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Channel Type

P

Pin Sayısı

3

Typical Gate Charge10v Nc

150

Svhc

Yes

Vds Drainsource Breakdown Voltage

200 V

Mounting

Through Hole

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

150 mOhms

Maximum Drain Source Resistance Mohm

150@10V

Parça Durumu

Active

Automotive

No

Typical Turnon Delay Time Ns

36

Material

Si

Supplier Package

TO-247AD

Maximum Continuous Drain Current A

24

Package Width

5.3(Max)

Continuous Drain Current Id

24A

Maximum Power Dissipation Mw

300000

Channel Mode

Enhancement

Maximum Gate Source Voltage V

±20

Tab

Tab

Package Length

16.26(Max)

Typical Rise Time Ns

29

Kılıf / Paket

TO-247-3

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

3

Typical Fall Time Ns

28

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Eccn Us

EAR99

Maximum Drain Source Voltage V

200

Typical Turnoff Delay Time Ns

68

Qg Gate Charge

150 nC