IXTH21N50

Specifications

Supplier Package

TO-247AD

Material

Si

Typical Turnon Delay Time Ns

24

Maximum Continuous Drain Current A

21

Package Width

5.3(Max)

Process Technology

MegaMOS

Automotive

No

Typical Gate Charge Vgs Nc

160@10V

Hts

8541.29.00.95

Package Length

16.26(Max)

Configuration

Single

Channel Mode

Enhancement

Maximum Power Dissipation Mw

300000

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

30

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Ppap

No

Typical Rise Time Ns

33

Minimum Operating Temperature C

-55

Pcb Changed

3

Typical Input Capacitance Vds Pf

4200@25V

Parça Durumu

NRND

Maximum Drain Source Resistance Mohm

250@10V

Typical Turnoff Delay Time Ns

65

Svhc

Yes

Eccn Us

EAR99

Typical Gate Charge10v Nc

160

Maximum Drain Source Voltage V

500

Mounting

Through Hole

Number Of Elements Per Chip

1