IXTH200N10T

Specifications

Package Length

16.26(Max)

Configuration

Single

Power Dissipation

550W

Channel Mode

Enhancement

Maximum Power Dissipation Mw

550000

Continuous Drain Current Id

200A

Tab

Tab

Supplier Package

TO-247

Typical Turnon Delay Time Ns

35

Package Width

5.3(Max)

Maximum Continuous Drain Current A

200

Automotive

Unknown

Typical Gate Charge Vgs Nc

152@10V

Hts

8541.29.00.95

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

5.5@10V

Typical Turnoff Delay Time Ns

45

Svhc

Yes

Eccn Us

EAR99

Typical Gate Charge10v Nc

152

Maximum Drain Source Voltage V

100

Mounting

Through Hole

Number Of Elements Per Chip

1

Maximum Operating Temperature C

175

Category

Power MOSFET

Typical Fall Time Ns

34

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Ppap

Unknown

Typical Rise Time Ns

31

Minimum Operating Temperature C

-55

Pcb Changed

3

Typical Input Capacitance Vds Pf

9400@25V