IXTH1N200P3HV

Specifications

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

40000@10V

Maximum Idss Ua

5

Typical Turnoff Delay Time Ns

37

Svhc

Yes

Typical Gate Charge10v Nc

23.5

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

2000

Mounting

Through Hole

Number Of Elements Per Chip

1

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

80

Package Height

23(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Ppap

No

Typical Rise Time Ns

26

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

646@25V

Package Length

16.2(Max)

Configuration

Single

Channel Mode

Enhancement

Maximum Power Dissipation Mw

125000

Tab

Tab

Maximum Gate Source Voltage V

±20

Supplier Package

TO-247HV

Typical Turnon Delay Time Ns

16

Package Width

5.1(Max)

Maximum Continuous Drain Current A

1

Maximum Gate Threshold Voltage V

4

Automotive

No

Typical Gate Charge Vgs Nc

23.5@10V