IXTH1N200P3

Specifications

Power Dissipation

125W

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

1 A

Configuration

Single

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2 V

Number Of Channels

1 Channel

Typical Gate Charge Vgs Nc

23.5@10V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

125 W

Qg Gate Charge

23.5 nC

Montaj Stili

Through Hole

Typical Turnoff Delay Time Ns

37

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

2000

Eu Rohs

Compliant with Exemption

Svhc Exceeds Threshold

Yes

Package Height

21.45(Max)

Typical Fall Time Ns

80

Kılıf / Paket

TO-247-3

Pcb Changed

3

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Rise Time Ns

26

Package Length

16.24(Max)

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

125000

Continuous Drain Current Id

1A

Channel Mode

Enhancement

Maximum Gate Threshold Voltage V

4

Maximum Continuous Drain Current A

1

Package Width

5.3(Max)

Typical Turnon Delay Time Ns

16

Supplier Package

TO-247

Automotive

No

Maximum Drain Source Resistance Mohm

40000@10V

Maximum Idss Ua

5

Parça Durumu

Active

Rds On Drainsource Resistance

40 Ohms