IXTH16N10D2

Specifications

Pd Power Dissipation

830 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

225@5V

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4.5 V

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

16 A

Power Dissipation

830W

Number Of Channels

1 Channel

Typical Fall Time Ns

70

Package Height

21.46(Max)

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Typical Rise Time Ns

43

Pcb Changed

3

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Kılıf / Paket

TO-247-3

Typical Turnoff Delay Time Ns

340

Montaj Stili

Through Hole

Qg Gate Charge

225 nC

Maximum Drain Source Voltage V

100

Supplier Package

TO-247

Typical Turnon Delay Time Ns

45

Maximum Continuous Drain Current A

16(Min)

Package Width

5.3(Max)

Automotive

No

Package Length

16.26(Max)

Channel Mode

Depletion

Continuous Drain Current Id

16A

Maximum Power Dissipation Mw

830000

Maximum Gate Source Voltage V

±20

Tab

Tab

Maximum Operating Temperature C

175

Category

Power MOSFET

Channel Type

N

Pin Sayısı

3

Ppap

No

Technology

Si