IXTH130N10T

Specifications

Maximum Drain Source Voltage V

100

Rds On Drainsource Resistance

8.5 mOhms

Number Of Elements Per Chip

1

Mounting

Through Hole

Vds Drainsource Breakdown Voltage

100 V

Svhc

Yes

Typical Gate Charge10v Nc

104

Montaj Stili

Through Hole

Qg Gate Charge

104 nC

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

9.1@10V

Typical Turnoff Delay Time Ns

44

Pcb Changed

3

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Input Capacitance Vds Pf

5080@25V

Kılıf / Paket

TO-247-3

Ppap

Unknown

Technology

Si

Typical Rise Time Ns

47

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Maximum Operating Temperature C

175

Category

Power MOSFET

Typical Fall Time Ns

28

Tab

Tab

Number Of Channels

1 Channel

Channel Mode

Enhancement

Maximum Power Dissipation Mw

360000

Configuration

Single

Id Continuous Drain Current

130 A

Vgs Gatesource Voltage

- 20 V, + 20 V

Package Length

16.26(Max)

Vgs Th Gatesource Threshold Voltage

2.5 V

Transistor Polarity

N-Channel

Automotive

Unknown

Typical Gate Charge Vgs Nc

104@10V