IXTH12N100L

Specifications

Maximum Gate Source Voltage V

±30

Tab

Tab

Channel Mode

Enhancement

Maximum Power Dissipation Mw

400000

Configuration

Single

Package Length

16.26(Max)

Automotive

No

Hts

8541.29.00.95

Typical Gate Charge Vgs Nc

155@20V

Maximum Continuous Drain Current A

12

Package Width

5.3(Max)

Supplier Package

TO-247

Typical Turnon Delay Time Ns

30

Maximum Drain Source Voltage V

1000

Mounting

Through Hole

Number Of Elements Per Chip

1

Svhc

Yes

Eccn Us

EAR99

Parça Durumu

Active

Typical Turnoff Delay Time Ns

110

Maximum Drain Source Resistance Mohm

1300@20V

Typical Input Capacitance Vds Pf

2500@25V

Minimum Operating Temperature C

-55

Pcb Changed

3

Ppap

No

Typical Rise Time Ns

55

Package Height

21.46(Max)

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

65