IXTH110N25T

Specifications

Process Technology

TrenchFET

Automotive

No

Typical Gate Charge Vgs Nc

157@10V

Hts

8541.29.00.95

Supplier Package

TO-247AD

Typical Turnon Delay Time Ns

19

Maximum Continuous Drain Current A

110

Package Width

5.3(Max)

Maximum Gate Threshold Voltage V

5

Channel Mode

Enhancement

Maximum Power Dissipation Mw

694000

Continuous Drain Current Id

110A

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

16.26(Max)

Configuration

Single

Power Dissipation

694W

Ppap

No

Typical Rise Time Ns

27

Minimum Operating Temperature C

-55

Pcb Changed

3

Typical Input Capacitance Vds Pf

9400@25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

27

Package Height

21.46(Max)

Eu Rohs

Compliant with Exemption

Channel Type

N

Pin Sayısı

3

Svhc Exceeds Threshold

Yes

Svhc

Yes

Typical Gate Charge10v Nc

157

Maximum Gate Source Leakage Current Na

200

Maximum Drain Source Voltage V

250

Mounting

Through Hole

Number Of Elements Per Chip

1

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

26@10V

Typical Turnoff Delay Time Ns

60

Maximum Idss Ua

5