IXTH102N15T

Specifications

Typical Gate Charge Vgs Nc

87@10V

Automotive

No

Process Technology

TrenchFET

Package Width

5.3(Max)

Maximum Continuous Drain Current A

102

Typical Turnon Delay Time Ns

20

Supplier Package

TO-247

Maximum Gate Source Voltage V

±20

Tab

Tab

Maximum Power Dissipation Mw

455000

Channel Mode

Enhancement

Configuration

Single

Package Length

16.26(Max)

Typical Input Capacitance Vds Pf

5220@25V

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Rise Time Ns

14

Ppap

No

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant with Exemption

Package Height

21.46(Max)

Typical Fall Time Ns

22

Category

Power MOSFET

Maximum Operating Temperature C

175

Mounting

Through Hole

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

150

Typical Gate Charge10v Nc

87

Svhc

Yes

Typical Turnoff Delay Time Ns

25

Maximum Drain Source Resistance Mohm

18@10V

Parça Durumu

Active