Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Polarity
- N-Channel
- Vgs Th Gatesource Threshold Voltage
- 4 V
- Parça Durumu
- Active
- Power Dissipation
- 113W
- Qg Gate Charge
- 10.6 nC
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Id Continuous Drain Current
- 200 mA
- Montaj Stili
- Through Hole
- Continuous Drain Current Id
- 200mA
- Vds Drainsource Breakdown Voltage
- 4.5 kV
- Number Of Channels
- 1 Channel
- Svhc
- Yes
- Channel Mode
- Enhancement
- Rds On Drainsource Resistance
- 625 Ohms
- Eu Rohs
- Compliant with Exemption
- Svhc Exceeds Threshold
- Yes
- Channel Type
- N Channel
- Technology
- Si
- Ppap
- No
- Kılıf / Paket
- TO-247-3
- Pd Power Dissipation
- 113 W
- Minimum Operating Temperature
- - 55 C
- Maks. Çalışma Sıcaklığı
- + 150 C
- Automotive
- No
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