IXTF1N450

Specifications

Package Height

21.34(Max)

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

127

Pcb Changed

3

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

1730@25V

Ppap

No

Typical Rise Time Ns

60

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

80000@10V

Typical Turnoff Delay Time Ns

58

Maximum Idss Ua

50

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

4500

Number Of Elements Per Chip

1

Mounting

Through Hole

Typical Gate Charge10v Nc

40

Maximum Continuous Drain Current A

0.9

Package Width

5.21(Max)

Maximum Gate Threshold Voltage V

6

Material

Si

Supplier Package

ISOPLUS I4-PAK

Typical Turnon Delay Time Ns

34

Automotive

No

Typical Gate Charge Vgs Nc

40@10V

Configuration

Single

Power Dissipation

160W

Package Length

20.29(Max)

Tab

Tab

Maximum Gate Source Voltage V

±20

Channel Mode

Enhancement

Maximum Power Dissipation Mw

160000

Continuous Drain Current Id

900mA