IXTF02N450

Specifications

Automotive

No

Typical Turnon Delay Time Ns

17

Supplier Package

ISOPLUS I4-PAK

Material

Si

Maximum Gate Threshold Voltage V

6.5

Package Width

5.21(Max)

Maximum Continuous Drain Current A

0.2

Maximum Power Dissipation Mw

78000

Continuous Drain Current Id

200mA

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

20.29(Max)

Technology

Si

Ppap

No

Typical Input Capacitance Vds Pf

256@25V

Maximum Operating Temperature C

150

Category

Power MOSFET

Pin Sayısı

3

Channel Type

N

Typical Gate Charge10v Nc

10.4

Vds Drainsource Breakdown Voltage

4.5 kV

Rds On Drainsource Resistance

625 Ohms

Number Of Elements Per Chip

1

Mounting

Through Hole

Maximum Drain Source Resistance Mohm

625000@10V

Maximum Idss Ua

10

Parça Durumu

Active

Typical Gate Charge Vgs Nc

10.4@10V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

78 W

Number Of Channels

1 Channel

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4 V

Power Dissipation

78W

Id Continuous Drain Current

200 mA

Vgs Gatesource Voltage

- 20 V, + 20 V

Configuration

Single

Typical Rise Time Ns

48

Kılıf / Paket

ISOPLUS-i4-PAK-3