IXTA8N65X2

Specifications

Configuration

Single

Package Length

10.29(Max)

Tab

Tab

Maximum Gate Source Voltage V

±30

Channel Mode

Enhancement

Maximum Power Dissipation Mw

150000

Maximum Continuous Drain Current A

8

Package Width

9.65(Max)

Maximum Gate Threshold Voltage V

5

Supplier Package

TO-263AA

Typical Turnon Delay Time Ns

24

Automotive

No

Typical Gate Charge Vgs Nc

12@10V

Hts

8541.29.00.95

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

500@10V

Typical Turnoff Delay Time Ns

53

Maximum Idss Ua

10

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

650

Number Of Elements Per Chip

1

Mounting

Surface Mount

Typical Gate Charge10v Nc

12

Eccn Us

EAR99

Package Height

4.83(Max)

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

24

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

800@25V

Ppap

No

Typical Rise Time Ns

28