IXTA8N50P

Specifications

Channel Mode

Enhancement

Maximum Power Dissipation Mw

150000

Maximum Gate Source Voltage V

±30

Tab

Tab

Package Length

10.41(Max)

Configuration

Single

Automotive

No

Typical Gate Charge Vgs Nc

20@10V

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

22

Maximum Continuous Drain Current A

8

Package Width

9.65(Max)

Typical Gate Charge10v Nc

20

Maximum Drain Source Voltage V

500

Mounting

Surface Mount

Number Of Elements Per Chip

1

Parça Durumu

Active

Typical Turnoff Delay Time Ns

65

Maximum Drain Source Resistance Mohm

800@10V

Ppap

No

Typical Rise Time Ns

28

Typical Input Capacitance Vds Pf

1050@25V

Minimum Operating Temperature C

-55

Pcb Changed

2

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

23

Package Height

4.83(Max)

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant