IXTA86N20T-TRL

Specifications

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

33 mOhms

Maximum Drain Source Voltage V

200

Eccn Us

EAR99

Typical Gate Charge10v Nc

90

Vds Drainsource Breakdown Voltage

200 V

Qg Gate Charge

90 nC

Ambalaj

Tape and Reel

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

52

Maximum Drain Source Resistance Mohm

33@10V

Parça Durumu

Active

Kılıf / Paket

TO-263-3

Typical Input Capacitance Vds Pf

4500@25V

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Technology

Si

Typical Rise Time Ns

24

Ppap

No

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Package Height

4.83(Max)

Typical Fall Time Ns

29

Maximum Operating Temperature C

175

Category

Power MOSFET

Lead Shape

Gull-wing

Tab

Tab

Maximum Power Dissipation Mw

550000

Channel Mode

Enhancement

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

86 A

Configuration

Single

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Package Length

10.41(Max)

Pd Power Dissipation

550 W