IXTA86N20T

Specifications

Montaj Stili

SMD/SMT

Maximum Drain Source Resistance Mohm

33@10V

Typical Turnoff Delay Time Ns

52

Parça Durumu

Active

Rds On Drainsource Resistance

29 mOhms

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

200

Typical Gate Charge10v Nc

90

Vds Drainsource Breakdown Voltage

200 V

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Package Height

4.83(Max)

Typical Fall Time Ns

29

Maximum Operating Temperature C

175

Category

Power MOSFET

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 175 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

4500@25V

Technology

Si

Typical Rise Time Ns

24

Ppap

No

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

86 A

Configuration

Single

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Tab

Tab

Lead Shape

Gull-wing

Maximum Power Dissipation Mw

550000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Standard Package Name

TO-263

Maximum Continuous Drain Current A

86

Package Width

9.4(Max)

Typical Turnon Delay Time Ns

22

Supplier Package

D2PAK