IXTA80N12T2

Specifications

Parça Durumu

Active

Maximum Idss Ua

5

Typical Turnoff Delay Time Ns

39

Maximum Drain Source Resistance Mohm

17@10V

Eccn Us

EAR99

Typical Gate Charge10v Nc

80

Maximum Drain Source Voltage V

120

Maximum Gate Source Leakage Current Na

200

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Operating Temperature C

175

Category

Power MOSFET

Typical Fall Time Ns

28

Package Height

4.83(Max)

Channel Type

N

Pin Sayısı

3

Eu Rohs

Compliant

Ppap

No

Typical Rise Time Ns

14

Typical Input Capacitance Vds Pf

4740@25V

Minimum Operating Temperature C

-55

Pcb Changed

2

Package Length

10.29(Max)

Configuration

Single

Channel Mode

Enhancement

Maximum Power Dissipation Mw

325000

Maximum Gate Source Voltage V

±20

Tab

Tab

Supplier Package

TO-263AA

Typical Turnon Delay Time Ns

21

Maximum Continuous Drain Current A

80

Package Width

9.65(Max)

Maximum Gate Threshold Voltage V

4.5

Process Technology

TrenchFET

Automotive

No

Typical Gate Charge Vgs Nc

80@10V