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Specifications
- Standard Package Name
- TO-263
- Pd Power Dissipation
- 357 W
- Minimum Operating Temperature
- - 55 C
- Configuration
- Single
- Id Continuous Drain Current
- 80 A
- Vgs Gatesource Voltage
- - 20 V, + 20 V
- Vgs Th Gatesource Threshold Voltage
- 2.5 V
- Transistor Polarity
- N-Channel
- Number Of Channels
- 1 Channel
- Package Height
- 4.83(Max)
- Eu Rohs
- Compliant
- Typical Fall Time Ns
- 12
- Pcb Changed
- 2
- Minimum Operating Temperature C
- -55
- Maks. Çalışma Sıcaklığı
- + 150 C
- Kılıf / Paket
- TO-263AA-3
- Typical Rise Time Ns
- 35
- Montaj Stili
- SMD/SMT
- Ambalaj
- Tape and Reel
- Qg Gate Charge
- 103 nC
- Typical Turnoff Delay Time Ns
- 40
- Maximum Gate Source Leakage Current Na
- 100
- Maximum Drain Source Voltage V
- 75
- Eccn Us
- EAR99
- Maximum Continuous Drain Current A
- 80
- Package Width
- 9.4(Max)
- Maximum Gate Threshold Voltage V
- 4.5
- Supplier Package
- D2PAK
- Typical Turnon Delay Time Ns
- 15
- Automotive
- No
- Package Length
- 10.41(Max)
- Tab
- Tab
- Lead Shape
- Gull-wing
- Maximum Gate Source Voltage V
- ±20
- Channel Mode
- Enhancement
- Maximum Power Dissipation Mw
- 357000
- Pin Sayısı
- 3
- Channel Type
- N
- Category
- Power MOSFET
- Maximum Operating Temperature C
- 150
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