IXTA60N20T

Specifications

Package Height

4.83(Max)

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Category

Power MOSFET

Maximum Operating Temperature C

175

Typical Fall Time Ns

22

Typical Input Capacitance Vds Pf

4530@25V

Minimum Operating Temperature C

-55

Pcb Changed

2

Ppap

No

Typical Rise Time Ns

13

Parça Durumu

Active

Typical Turnoff Delay Time Ns

33

Maximum Idss Ua

1

Maximum Drain Source Resistance Mohm

40@10V

Maximum Drain Source Voltage V

200

Maximum Gate Source Leakage Current Na

200

Number Of Elements Per Chip

1

Mounting

Surface Mount

Typical Gate Charge10v Nc

73

Eccn Us

EAR99

Package Width

9.4(Max)

Maximum Continuous Drain Current A

60

Standard Package Name

TO-263

Maximum Gate Threshold Voltage V

5

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

22

Automotive

No

Typical Gate Charge Vgs Nc

73@10V

Process Technology

TrenchFET

Configuration

Single

Package Length

10.41(Max)

Lead Shape

Gull-wing

Maximum Gate Source Voltage V

±20

Tab

Tab

Channel Mode

Enhancement

Maximum Power Dissipation Mw

500000