IXTA50N20P

Specifications

Automotive

No

Typical Gate Charge Vgs Nc

70@10V

Pd Power Dissipation

360 W

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

26

Package Width

9.65(Max)

Maximum Continuous Drain Current A

50

Number Of Channels

1 Channel

Channel Mode

Enhancement

Maximum Power Dissipation Mw

360000

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

5 V

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

50 A

Ppap

No

Typical Rise Time Ns

35

Technology

Si

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Input Capacitance Vds Pf

2720@25V

Kılıf / Paket

TO-263-3

Category

Power MOSFET

Maximum Operating Temperature C

175

Typical Fall Time Ns

30

Package Height

4.83(Max)

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

200 V

Typical Gate Charge10v Nc

70

Maximum Drain Source Voltage V

200

Rds On Drainsource Resistance

60 mOhms

Mounting

Surface Mount