IXTA4N80P-TRL

Specifications

Ppap

No

Typical Rise Time Ns

24

Technology

Si

Typical Input Capacitance Vds Pf

750@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Kılıf / Paket

TO-263-3

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

29

Package Height

4.83(Max)

Channel Type

N

Pin Sayısı

3

Eu Rohs

Compliant

Vds Drainsource Breakdown Voltage

800 V

Typical Gate Charge10v Nc

14.2

Eccn Us

EAR99

Maximum Drain Source Voltage V

800

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

3.4 Ohms

Parça Durumu

Active

Typical Turnoff Delay Time Ns

60

Maximum Drain Source Resistance Mohm

3400@10V

Montaj Stili

SMD/SMT

Qg Gate Charge

14.2 nC

Ambalaj

Tape and Reel

Process Technology

PolarHV

Automotive

No

Pd Power Dissipation

100 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

14.2@10V

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

22

Package Width

9.65(Max)

Maximum Continuous Drain Current A

3.6

Channel Mode

Enhancement

Number Of Channels

1 Channel

Maximum Power Dissipation Mw

100000