IXTA3N110-TRL

Specifications

Package Height

4.83(Max)

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

18

Typical Input Capacitance Vds Pf

1050@25V

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-263-3

Ppap

No

Technology

Si

Typical Rise Time Ns

15

Montaj Stili

SMD/SMT

Qg Gate Charge

39 nC

Ambalaj

Tape and Reel

Parça Durumu

Active

Typical Turnoff Delay Time Ns

32

Maximum Drain Source Resistance Mohm

4000@10V

Maximum Drain Source Voltage V

1100

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

4 Ohms

Vds Drainsource Breakdown Voltage

1.1 kV

Eccn Us

EAR99

Typical Gate Charge10v Nc

39

Package Width

9.65(Max)

Maximum Continuous Drain Current A

3

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

17

Automotive

No

Pd Power Dissipation

150 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

39@10V

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

3 A

Transistor Polarity

N-Channel