IXTA3N100P

Specifications

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

1000

Eccn Us

EAR99

Typical Gate Charge10v Nc

39

Svhc

Yes

Typical Turnoff Delay Time Ns

75

Maximum Drain Source Resistance Mohm

4800@10V

Parça Durumu

Active

Typical Input Capacitance Vds Pf

1100@25V

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Rise Time Ns

27

Ppap

No

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant with Exemption

Package Height

4.83(Max)

Typical Fall Time Ns

29

Category

Power MOSFET

Maximum Operating Temperature C

150

Maximum Gate Source Voltage V

±20

Tab

Tab

Maximum Power Dissipation Mw

125000

Channel Mode

Enhancement

Configuration

Single

Package Length

10.41(Max)

Hts

8541.29.00.95

Typical Gate Charge Vgs Nc

39@10V

Automotive

No

Package Width

9.65(Max)

Maximum Continuous Drain Current A

3

Typical Turnon Delay Time Ns

22

Supplier Package

D2PAK