IXTA3N100D2HV

Specifications

Automotive

No

Pd Power Dissipation

125 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

37.5@5V

Package Width

9.4(Max)

Supplier Package

TO-263HV

Typical Turnon Delay Time Ns

27

Maximum Gate Source Voltage V

±20

Tab

Tab

Channel Mode

Depletion

Number Of Channels

1 Channel

Continuous Drain Current Id

3A

Maximum Power Dissipation Mw

125000

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

3 A

Power Dissipation

125W

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4.5 V

Package Length

10.2(Max)

Typical Input Capacitance Vds Pf

1020@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Kılıf / Paket

TO-263HV-3

Ppap

No

Typical Rise Time Ns

67

Technology

Si

Package Height

4.7(Max)

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

40

Maximum Drain Source Voltage V

1000

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

6 Ohms

Vds Drainsource Breakdown Voltage

1 kV