IXTA3N100D2

Specifications

Ppap

No

Technology

Si

Typical Input Capacitance Vds Pf

1020@10V

Category

Power MOSFET

Maximum Operating Temperature C

150

Pin Sayısı

3

Channel Type

N

Svhc

Yes

Vds Drainsource Breakdown Voltage

1 kV

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

6 Ohms

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

6000@0V

Automotive

No

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

27

Package Width

9.4(Max)

Channel Mode

Depletion

Continuous Drain Current Id

3A

Maximum Power Dissipation Mw

125000

Lead Shape

Gull-wing

Maximum Gate Source Voltage V

±20

Tab

Tab

Package Length

10.41(Max)

Typical Rise Time Ns

67

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Kılıf / Paket

TO-263-3

Typical Fall Time Ns

40

Package Height

4.83(Max)

Svhc Exceeds Threshold

Yes

Eu Rohs

Compliant with Exemption

Maximum Drain Source Voltage V

1000

Typical Turnoff Delay Time Ns

34

Montaj Stili

SMD/SMT

Qg Gate Charge

37.5 nC

Pd Power Dissipation

125 W

Minimum Operating Temperature

- 55 C