IXTA36N30P-TRL

Specifications

Automotive

No

Typical Gate Charge Vgs Nc

70@10V

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.95

Pd Power Dissipation

300 W

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

24

Package Width

9.65(Max)

Maximum Continuous Drain Current A

36

Number Of Channels

1 Channel

Channel Mode

Enhancement

Maximum Power Dissipation Mw

300000

Tab

Tab

Maximum Gate Source Voltage V

±30

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Configuration

Single

Id Continuous Drain Current

36 A

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Technology

Si

Typical Rise Time Ns

30

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

2250@25V

Kılıf / Paket

TO-263-3

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

28

Package Height

4.83(Max)

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

300 V

Typical Gate Charge10v Nc

70

Eccn Us

EAR99

Maximum Drain Source Voltage V

300

Rds On Drainsource Resistance

110 mOhms