IXTA34N65X2-TRL

Specifications

Lead Shape

Gull-wing

Maximum Gate Source Voltage V

±30

Tab

Tab

Maximum Power Dissipation Mw

540000

Channel Mode

Enhancement

Package Length

10.41(Max)

Automotive

No

Maximum Continuous Drain Current A

34

Package Width

9.4(Max)

Typical Turnon Delay Time Ns

30

Supplier Package

D2PAK

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

96 mOhms

Typical Gate Charge10v Nc

54

Vds Drainsource Breakdown Voltage

650 V

Maximum Drain Source Resistance Mohm

96@10V

Parça Durumu

Active

Typical Input Capacitance Vds Pf

3000@25V

Technology

Si

Ppap

No

Channel Type

N

Pin Sayısı

3

Maximum Operating Temperature C

150

Category

Power MOSFET

Number Of Channels

1 Channel

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

34 A

Configuration

Single

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

3 V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

540 W

Typical Gate Charge Vgs Nc

54@10V

Standard Package Name

TO-263

Maximum Drain Source Voltage V

650

Eccn Us

EAR99

Qg Gate Charge

54 nC

Ambalaj

Tape and Reel

Montaj Stili

SMD/SMT