IXTA32P20T-TRL

Specifications

Package Width

9.65(Max)

Maximum Continuous Drain Current A

32

Maximum Gate Threshold Voltage V

4

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

32

Automotive

No

Package Length

10.29(Max)

Tab

Tab

Maximum Gate Source Voltage V

±15

Channel Mode

Enhancement

Maximum Power Dissipation Mw

300000

Channel Type

P

Pin Sayısı

3

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Input Capacitance Vds Pf

14500@25V

Ppap

No

Technology

Si

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

130@10V

Maximum Idss Ua

25

Rds On Drainsource Resistance

130 mOhms

Mounting

Surface Mount

Number Of Elements Per Chip

1

Vds Drainsource Breakdown Voltage

200 V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

300 W

Process Technology

TrenchP

Configuration

Single

Vgs Gatesource Voltage

- 15 V, + 15 V

Id Continuous Drain Current

32 A

Transistor Polarity

P-Channel

Vgs Th Gatesource Threshold Voltage

2 V

Number Of Channels

1 Channel

Package Height

4.83(Max)

Eu Rohs

Compliant

Typical Fall Time Ns

12

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C