IXTA220N04T2-TRL

Specifications

Typical Rise Time Ns

21

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Kılıf / Paket

TO-263-7

Typical Fall Time Ns

21

Package Height

4.7(Max)

Eu Rohs

Compliant

Eccn Us

EAR99

Maximum Drain Source Voltage V

40

Typical Turnoff Delay Time Ns

31

Montaj Stili

SMD/SMT

Qg Gate Charge

112 nC

Ambalaj

Tape and Reel

Process Technology

TrenchT2

Hts

8541.29.00.95

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

360 W

Typical Gate Charge Vgs Nc

112@10V

Number Of Channels

1 Channel

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2 V

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

220 A

Ppap

Unknown

Technology

Si

Typical Input Capacitance Vds Pf

6820@25V

Maximum Operating Temperature C

175

Category

Power MOSFET

Pin Sayısı

3

Channel Type

N

Vds Drainsource Breakdown Voltage

40 V

Typical Gate Charge10v Nc

112

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

3.5 mOhms

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

3.5@10V

Automotive

Unknown