IXTA1R6N100D2

Specifications

Maximum Power Dissipation Mw

100000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

4.5 V

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

1.6 A

Configuration

Single

Typical Gate Charge Vgs Nc

27@5V

Pd Power Dissipation

100 W

Minimum Operating Temperature

- 55 C

Automotive

No

Typical Turnon Delay Time Ns

27

Supplier Package

D2PAK

Package Width

9.4(Max)

Maximum Continuous Drain Current A

1.6(Min)

Typical Gate Charge10v Nc

27

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

1 kV

Svhc

Yes

Rds On Drainsource Resistance

10 Ohms

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

1000

Maximum Drain Source Resistance Mohm

10000@0V

Typical Turnoff Delay Time Ns

34

Parça Durumu

Active

Qg Gate Charge

27 nC

Montaj Stili

SMD/SMT

Technology

Si

Typical Rise Time Ns

65

Ppap

No

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 150 C

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

645@10V