IXTA1R4N120P

Specifications

Supplier Package

D2PAK

Typical Gate Plateau Voltage V

4.75

Typical Turnon Delay Time Ns

25

Package Width

9.65(Max)

Maximum Continuous Drain Current A

1.4

Maximum Gate Threshold Voltage V

4.5

Process Technology

Polar

Automotive

No

Typical Gate Charge Vgs Nc

24.8@10V

Typical Reverse Recovery Time Ns

900

Package Length

10.29(Max)

Typical Output Capacitance Pf

36

Configuration

Single

Channel Mode

Enhancement

Maximum Power Dissipation Mw

86000

Maximum Gate Source Voltage V

±30

Tab

Tab

Maximum Positive Gate Source Voltage V

30

Maximum Operating Temperature C

150

Category

Power MOSFET

Operating Junction Temperature C

150

Typical Fall Time Ns

29

Typical Gate To Drain Charge Nc

12.8

Package Height

4.83(Max)

Typical Reverse Transfer Capacitance Vds Pf

7.6@25V

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Ppap

No

Typical Rise Time Ns

27

Typical Input Capacitance Vds Pf

666@25V

Pcb Changed

2

Typical Gate To Source Charge Nc

4.4

Minimum Operating Temperature C

-55

Parça Durumu

Active

Maximum Idss Ua

5

Typical Turnoff Delay Time Ns

78

Maximum Drain Source Resistance Mohm

13000@10V

Maximum Pulsed Drain Current Tc25c A

3

Maximum Diode Forward Voltage V

1.5