IXTA1R4N100PTRL

Specifications

Automotive

No

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

63 W

Typical Gate Charge Vgs Nc

17.8@10V

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

25

Package Width

9.4(Max)

Maximum Continuous Drain Current A

1.4

Channel Mode

Enhancement

Number Of Channels

1 Channel

Maximum Power Dissipation Mw

63000

Maximum Gate Source Voltage V

±20

Tab

Tab

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Package Length

10.41(Max)

Configuration

Single

Id Continuous Drain Current

1.4 A

Vgs Gatesource Voltage

- 20 V, + 20 V

Ppap

No

Technology

Si

Typical Rise Time Ns

35

Typical Input Capacitance Vds Pf

450@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Kılıf / Paket

TO-252-3

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

28

Package Height

4.7(Max)

Channel Type

N

Pin Sayısı

3

Eu Rohs

Compliant

Vds Drainsource Breakdown Voltage

1 kV

Typical Gate Charge10v Nc

17.8

Eccn Us

EAR99

Maximum Drain Source Voltage V

1000

Number Of Elements Per Chip

1

Mounting

Surface Mount