IXTA1R4N100P

Specifications

Typical Rise Time Ns

35

Ppap

No

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

450@25V

Typical Fall Time Ns

28

Maximum Operating Temperature C

150

Category

Power MOSFET

Eu Rohs

Compliant

Pin Sayısı

3

Channel Type

N

Package Height

4.7(Max)

Typical Gate Charge10v Nc

17.8

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

1000

Maximum Drain Source Resistance Mohm

11800@10V

Typical Turnoff Delay Time Ns

65

Parça Durumu

Active

Typical Gate Charge Vgs Nc

17.8@10V

Automotive

No

Typical Turnon Delay Time Ns

25

Supplier Package

D2PAK

Package Width

9.4(Max)

Maximum Continuous Drain Current A

1.4

Maximum Power Dissipation Mw

63000

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.41(Max)

Configuration

Single