IXTA1N200P3HV

Specifications

Category

Power MOSFET

Maximum Operating Temperature C

150

Pin Sayısı

3

Channel Type

N

Technology

Si

Ppap

No

Typical Input Capacitance Vds Pf

646@25V

Maximum Idss Ua

5

Maximum Drain Source Resistance Mohm

40000@10V

Parça Durumu

Active

Typical Gate Charge10v Nc

23.5

Vds Drainsource Breakdown Voltage

2 kV

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

40 Ohms

Typical Turnon Delay Time Ns

16

Supplier Package

TO-263HV

Maximum Gate Threshold Voltage V

4

Maximum Continuous Drain Current A

1

Package Width

9.4(Max)

Automotive

No

Package Length

10.2(Max)

Continuous Drain Current Id

1A

Maximum Power Dissipation Mw

125000

Channel Mode

Enhancement

Maximum Gate Source Voltage V

±20

Tab

Tab

Typical Fall Time Ns

80

Eu Rohs

Compliant with Exemption

Package Height

4.7(Max)

Typical Rise Time Ns

26

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Turnoff Delay Time Ns

37

Qg Gate Charge

23.5 nC

Montaj Stili

SMD/SMT

Maximum Drain Source Voltage V

2000

Maximum Gate Source Leakage Current Na

100