IXTA1N170DHV

Specifications

Parça Durumu

Active

Maximum Drain Source Resistance Mohm

16000@0V

Maximum Idss Ua

10

Typical Turnoff Delay Time Ns

130

Maximum Gate Source Leakage Current Na

100

Maximum Drain Source Voltage V

1700

Number Of Elements Per Chip

1

Mounting

Surface Mount

Eccn Us

EAR99

Maximum Diode Forward Voltage V

1.3

Typical Gate To Drain Charge Nc

25

Package Height

4.7(Max)

Typical Reverse Transfer Capacitance Vds Pf

30

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Channel Type

N

Operating Junction Temperature C

150

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

216

Typical Gate To Source Charge Nc

3.7

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

3090@25V

Typical Diode Forward Voltage V

0.75

Ppap

No

Typical Rise Time Ns

38

Configuration

Single

Typical Reverse Recovery Charge Nc

63000

Power Dissipation

290W

Package Length

10.2(Max)

Typical Output Capacitance Pf

95

Typical Reverse Recovery Time Ns

2800

Tab

Tab

Maximum Positive Gate Source Voltage V

20

Maximum Gate Source Voltage V

±20

Channel Mode

Depletion

Maximum Power Dissipation Mw

290000

Continuous Drain Current Id

1A

Standard Package Name

TO-263