IXTA1N120P-TRL

Specifications

Parça Durumu

Active

Typical Turnoff Delay Time Ns

54

Maximum Drain Source Resistance Mohm

20000@10V

Montaj Stili

SMD/SMT

Qg Gate Charge

17.6 nC

Ambalaj

Tape and Reel

Vds Drainsource Breakdown Voltage

1.2 kV

Typical Gate Charge10v Nc

17.6

Eccn Us

EAR99

Maximum Drain Source Voltage V

1200

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

20 Ohms

Category

Power MOSFET

Maximum Operating Temperature C

150

Typical Fall Time Ns

27

Package Height

4.7(Max)

Pin Sayısı

3

Channel Type

N

Eu Rohs

Compliant

Ppap

No

Typical Rise Time Ns

28

Technology

Si

Typical Input Capacitance Vds Pf

445@25V

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Kılıf / Paket

TO-263-3

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Package Length

10.41(Max)

Configuration

Single

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

1 A

Channel Mode

Enhancement

Number Of Channels

1 Channel

Maximum Power Dissipation Mw

63000

Maximum Gate Source Voltage V

±30

Tab

Tab

Supplier Package

D2PAK