IXTA182N055T7

Specifications

Typical Rise Time Ns

35

Technology

Si

Ppap

Unknown

Kılıf / Paket

TO-263-7

Typical Input Capacitance Vds Pf

4850@25V

Pcb Changed

6

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Fall Time Ns

38

Maximum Operating Temperature C

175

Category

Power MOSFET

Channel Type

N

Pin Sayısı

7

Eu Rohs

Compliant

Package Height

4.7(Max)

Typical Gate Charge10v Nc

114

Vds Drainsource Breakdown Voltage

55 V

Number Of Elements Per Chip

1

Mounting

Surface Mount

Rds On Drainsource Resistance

5 mOhms

Maximum Drain Source Voltage V

55

Typical Turnoff Delay Time Ns

53

Maximum Drain Source Resistance Mohm

5@10V

Parça Durumu

Obsolete

Montaj Stili

SMD/SMT

Pd Power Dissipation

360 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

114@10V

Automotive

Unknown

Typical Turnon Delay Time Ns

36

Supplier Package

D2PAK

Maximum Continuous Drain Current A

182

Package Width

9.4(Max)

Maximum Power Dissipation Mw

360000

Channel Mode

Enhancement

Number Of Channels

1 Channel

Tab

Tab

Transistor Polarity

N-Channel

Package Length

10.2(Max)

Id Continuous Drain Current

182 A