IXTA180N10T7-TRL

Specifications

Pd Power Dissipation

480 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

151@10V

Automotive

Unknown

Typical Turnon Delay Time Ns

33

Supplier Package

D2PAK

Package Width

9.4(Max)

Maximum Continuous Drain Current A

180

Maximum Power Dissipation Mw

480000

Channel Mode

Enhancement

Number Of Channels

1 Channel

Tab

Tab

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Package Length

10.2(Max)

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

180 A

Configuration

Single Quint Source

Typical Rise Time Ns

54

Technology

Si

Ppap

Unknown

Kılıf / Paket

TO-263-7

Typical Input Capacitance Vds Pf

6900@25V

Pcb Changed

6

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 175 C

Typical Fall Time Ns

31

Category

Power MOSFET

Maximum Operating Temperature C

175

Channel Type

N

Pin Sayısı

7

Eu Rohs

Compliant

Package Height

4.7(Max)

Eccn Us

EAR99

Typical Gate Charge10v Nc

151

Vds Drainsource Breakdown Voltage

100 V

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

6.4 mOhms

Maximum Drain Source Voltage V

100