IXTA160N10T7

Specifications

Vds Drainsource Breakdown Voltage

100 V

Typical Gate Charge10v Nc

132

Maximum Drain Source Voltage V

100

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

7 mOhms

Parça Durumu

Active

Typical Turnoff Delay Time Ns

49

Maximum Drain Source Resistance Mohm

7@10V

Montaj Stili

SMD/SMT

Ppap

Unknown

Technology

Si

Typical Rise Time Ns

61

Typical Input Capacitance Vds Pf

6600@25V

Maks. Çalışma Sıcaklığı

+ 175 C

Minimum Operating Temperature C

-55

Pcb Changed

6

Kılıf / Paket

TO-263-7

Maximum Operating Temperature C

175

Category

Power MOSFET

Typical Fall Time Ns

42

Package Height

4.7(Max)

Channel Type

N

Pin Sayısı

7

Eu Rohs

Compliant

Channel Mode

Enhancement

Number Of Channels

1 Channel

Maximum Power Dissipation Mw

430000

Tab

Tab

Transistor Polarity

N-Channel

Package Length

10.2(Max)

Configuration

Single Quint Source

Id Continuous Drain Current

160 A

Automotive

Unknown

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

430 W

Typical Gate Charge Vgs Nc

132@10V

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

33

Package Width

9.4(Max)