IXTA10P15T-TRL

Specifications

Kılıf / Paket

TO-263-3

Pcb Changed

2

Minimum Operating Temperature C

-55

Maks. Çalışma Sıcaklığı

+ 150 C

Typical Rise Time Ns

16

Eu Rohs

Compliant

Package Height

4.83(Max)

Typical Fall Time Ns

12

Maximum Drain Source Voltage V

150

Maximum Gate Source Leakage Current Na

50

Eccn Us

EAR99

Qg Gate Charge

36 nC

Ambalaj

Tape and Reel

Montaj Stili

SMD/SMT

Typical Turnoff Delay Time Ns

40

Pd Power Dissipation

83 W

Minimum Operating Temperature

- 55 C

Typical Gate Charge Vgs Nc

36@10V

Process Technology

TrenchFET

Standard Package Name

TO-263

Number Of Channels

1 Channel

Id Continuous Drain Current

10 A

Vgs Gatesource Voltage

- 15 V, + 15 V

Configuration

Single

Vgs Th Gatesource Threshold Voltage

2 V

Transistor Polarity

P-Channel

Typical Input Capacitance Vds Pf

2210@25V

Technology

Si

Ppap

No

Pin Sayısı

3

Channel Type

P

Category

Power MOSFET

Maximum Operating Temperature C

150

Mounting

Surface Mount

Number Of Elements Per Chip

1

Rds On Drainsource Resistance

350 mOhms

Typical Gate Charge10v Nc

36

Vds Drainsource Breakdown Voltage

150 V

Maximum Idss Ua

3

Maximum Drain Source Resistance Mohm

350@10V