IXTA10N60P

Specifications

Typical Turnon Delay Time Ns

23

Supplier Package

D2PAK

Package Width

9.65(Max)

Maximum Continuous Drain Current A

10

Typical Gate Charge Vgs Nc

23@10V

Pd Power Dissipation

200 W

Minimum Operating Temperature

- 55 C

Automotive

No

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Gatesource Voltage

- 30 V, + 30 V

Id Continuous Drain Current

10 A

Configuration

Single

Maximum Power Dissipation Mw

200000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±30

Typical Fall Time Ns

21

Category

Power MOSFET

Maximum Operating Temperature C

150

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Package Height

4.83(Max)

Typical Rise Time Ns

27

Technology

Si

Ppap

No

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 150 C

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

1720@25V

Maximum Drain Source Resistance Mohm

740@10V

Typical Turnoff Delay Time Ns

65

Parça Durumu

Active

Montaj Stili

SMD/SMT

Typical Gate Charge10v Nc

23

Vds Drainsource Breakdown Voltage

600 V

Rds On Drainsource Resistance

740 mOhms