IXTA102N15T-TRL

Specifications

Vgs Gatesource Voltage

- 20 V, + 20 V

Id Continuous Drain Current

102 A

Configuration

Single

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Tab

Tab

Maximum Gate Source Voltage V

±20

Maximum Power Dissipation Mw

455000

Number Of Channels

1 Channel

Channel Mode

Enhancement

Package Width

9.65(Max)

Maximum Continuous Drain Current A

102

Typical Turnon Delay Time Ns

20

Supplier Package

D2PAK

Typical Gate Charge Vgs Nc

87@10V

Pd Power Dissipation

455 W

Minimum Operating Temperature

- 55 C

Automotive

No

Process Technology

TrenchFET

Ambalaj

Tape and Reel

Qg Gate Charge

87 nC

Montaj Stili

SMD/SMT

Maximum Drain Source Resistance Mohm

18@10V

Typical Turnoff Delay Time Ns

25

Parça Durumu

Active

Rds On Drainsource Resistance

18 mOhms

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

150

Eccn Us

EAR99

Typical Gate Charge10v Nc

87

Vds Drainsource Breakdown Voltage

150 V

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Package Height

4.83(Max)

Typical Fall Time Ns

22

Category

Power MOSFET

Maximum Operating Temperature C

175