IXTA08N50D2

Specifications

Maximum Power Dissipation Mw

60000

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.29(Max)

Configuration

Single

Typical Gate Charge Vgs Nc

12.7@5V

Hts

8541.29.00.95

Automotive

No

Typical Turnon Delay Time Ns

28

Supplier Package

TO-263AA

Maximum Continuous Drain Current A

0.8(Min)

Package Width

9.65(Max)

Eccn Us

EAR99

Svhc

Yes

Mounting

Surface Mount

Number Of Elements Per Chip

1

Maximum Drain Source Voltage V

500

Maximum Drain Source Resistance Mohm

4600@0V

Typical Turnoff Delay Time Ns

35

Parça Durumu

Active

Typical Rise Time Ns

54

Ppap

No

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

312@25V

Typical Fall Time Ns

52

Maximum Operating Temperature C

150

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Channel Type

N

Svhc Exceeds Threshold

Yes

Pin Sayısı

3

Package Height

4.83(Max)