IXTA08N120P-TRL

Specifications

Automotive

No

Typical Gate Charge Vgs Nc

14@10V

Minimum Operating Temperature

- 55 C

Pd Power Dissipation

50 W

Supplier Package

D2PAK

Typical Turnon Delay Time Ns

20

Maximum Continuous Drain Current A

0.8

Package Width

9.4(Max)

Number Of Channels

1 Channel

Channel Mode

Enhancement

Maximum Power Dissipation Mw

50000

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.41(Max)

Transistor Polarity

N-Channel

Vgs Th Gatesource Threshold Voltage

2.5 V

Configuration

Single

Id Continuous Drain Current

800 mA

Vgs Gatesource Voltage

- 30 V, + 30 V

Ppap

No

Technology

Si

Typical Rise Time Ns

26

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

333@25V

Kılıf / Paket

TO-263-3

Maximum Operating Temperature C

150

Category

Power MOSFET

Typical Fall Time Ns

24

Package Height

4.7(Max)

Eu Rohs

Compliant

Channel Type

N

Pin Sayısı

3

Vds Drainsource Breakdown Voltage

1.2 kV

Typical Gate Charge10v Nc

14

Eccn Us

EAR99

Maximum Drain Source Voltage V

1200

Rds On Drainsource Resistance

25 Ohms

Mounting

Surface Mount