IXTA08N120P

Specifications

Technology

Si

Typical Rise Time Ns

26

Ppap

No

Kılıf / Paket

TO-263-3

Maks. Çalışma Sıcaklığı

+ 150 C

Minimum Operating Temperature C

-55

Pcb Changed

2

Typical Input Capacitance Vds Pf

333@25V

Typical Fall Time Ns

24

Seri

IXTA08N120

Maximum Operating Temperature C

150

Category

Power MOSFET

Eu Rohs

Compliant with Exemption

Pin Sayısı

3

Channel Type

N

Package Height

4.7(Max)

Typical Gate Charge10v Nc

14

Eccn Us

EAR99

Vds Drainsource Breakdown Voltage

1.2 kV

Rds On Drainsource Resistance

20.5 Ohms

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Drain Source Voltage V

1200

Maximum Drain Source Resistance Mohm

25000@10V

Typical Turnoff Delay Time Ns

55

Parça Durumu

Active

Qg Gate Charge

14 nC

Montaj Stili

SMD/SMT

Typical Gate Charge Vgs Nc

14@10V

Pd Power Dissipation

50 W

Minimum Operating Temperature

- 55 C

Hts

8541.29.00.95

Automotive

No

Typical Turnon Delay Time Ns

20

Supplier Package

D2PAK

Maximum Continuous Drain Current A

0.8

Package Width

9.4(Max)

Maximum Power Dissipation Mw

50000

Number Of Channels

1 Channel

Channel Mode

Enhancement