IXTA08N100P

Specifications

Typical Gate Charge10v Nc

11.3

Number Of Elements Per Chip

1

Mounting

Surface Mount

Maximum Drain Source Voltage V

1000

Maximum Drain Source Resistance Mohm

20000@10V

Typical Turnoff Delay Time Ns

35

Parça Durumu

Active

Typical Rise Time Ns

37

Ppap

No

Pcb Changed

2

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

240@25V

Typical Fall Time Ns

34

Category

Power MOSFET

Maximum Operating Temperature C

150

Eu Rohs

Compliant

Pin Sayısı

3

Channel Type

N

Package Height

4.7(Max)

Maximum Power Dissipation Mw

42000

Channel Mode

Enhancement

Tab

Tab

Maximum Gate Source Voltage V

±20

Package Length

10.41(Max)

Configuration

Single

Typical Gate Charge Vgs Nc

11.3@10V

Automotive

No

Typical Turnon Delay Time Ns

19

Supplier Package

D2PAK

Package Width

9.4(Max)

Maximum Continuous Drain Current A

0.8